IXYS CPC5603
The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device particularly in difficult application environments such as telecommunications, security, and power supplies.| Part No. | CPC5603 |
|---|---|
| Datasheet | CPC5603 Download |
| Manufacturer |  IXYS |
| Description | N-Channel FET |
| Buy | Stock & Price |
FEATURES
● 415V Drain-to-Source Voltage● Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
● Low On-Resistance: 8 (Typical) @ 25°C
● Low VGS(off) Voltage: -2.0V to -3.6V
● High Input Impedance
● Low Input and Output Leakage
● Small Package Size SOT-223
● PC Card (PCMCIA) Compatible
● PCB Space and Cost Savings
APPLICATIONS
● Support Component for LITELINK™ Data Access Arrangement (DAA)● Telecom
● Normally-On Switches
● Ignition Modules
● Converters
● Security
● Power Supplies CPC5603 N-Channel Depletion Mode FET
DESCRIPTION
One of the primary applications for the CPC5603 is as a linear regulator/hook switch for the LITELINK™ family of Data Access Arrangements (DAA) Devices CPC5620A, CPC5621A, and CPC5622A. The CPC5603 has a typical on-resistance of 8, a drain-to-source voltage of 415V and is available in the SOT-223 package. As with all MOS devices, the FET structure prevents thermal runaway and thermal-induced secondary breakdown. Ordering Information Part # CPC5603CTRDESCRIPTION
N-Channel Depletion Mode FET, SOT-223 Pkg.
