CPC5603C
Description
The CPC5603 is an N-channel, depletion mode Field Effect Transistor (FET) that utilizes IXYS Integrated Circuits Division’s proprietary third-generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process.
Key Features
- 415V Drain-to-Source Voltage
- Depletion Mode Device Offers Low RDS(on) at Cold Temperatures
- Low On-Resistance: 8 (Typical) @ 25°C
- Low VGS(off) Voltage: -2.0V to -3.6V
- High Input Impedance
- Low Input and Output Leakage
- Small Package Size SOT-223
- PC Card (PCMCIA) compatible
- PCB Space and Cost Savings
