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2SA1213-G - General Purpose Transistor

Features

  • -Small flat package. -Power amplifier and switching -.

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Datasheet Details

Part number 2SA1213-G
Manufacturer Comchip
File Size 141.37 KB
Description General Purpose Transistor
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    General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features -Small flat package. -Power amplifier and switching -applications. -Low saturation voltage. -High speed switching time. Maximum Ratings (at TA=25°C unless otherwise noted) Parameter Symbol Value Unit Collector-Base voltage VCBO -50 V Collector-Emitter voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Continuous current IC -2 A Collector power dissipation PC 500 mW Thermal resistance from junction to ambient RθJA 250 °C/W Junction temperature Storage temperature TJ 150 °C Tstg -55~+150 °C 1 : Base 2 : Collector 3 : Emitter SOT-89-3L 0.181(4.60) 0.173(4.40) 0.061(1.55) REF. 0.102(2.60) 0.091(2.30) 123 0.167(4.25) 0.155(3.94) 0.020(0.52) 0.013(0.32) 0.060(1.50) TYP. 0.023(0.58) 0.016(0.
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