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Comchip

BSS138-G Datasheet Preview

BSS138-G Datasheet

MOSFET

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MOSFET
BSS138-G
N-Channel 50-V(D-S) MOSFET
RoHS Device
Features
-High density cell design for extremely low RDS(ON).
-Rugged and Reliable.
Mechanical data
-Case: SOT-23, molded plastic.
-Terminals: solderable per MIL-STD-750,
method 2026.
Circuit diagram
D
G
S
1 : Gate
2 : Source
3 : Drain
0.055(1.40)
0.047(1.20)
0.041(1.05)
0.035(0.90)
SOT-23
0.118(3.00)
0.110(2.80)
3
12
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.004(0.10) max
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Drain-source voltage
Continuous gate-source voltage
Continuous drain current
Power dissipation
Thermal resistance from Junction to ambient
Operating temperature
Storage temperature
Symbol
VDS
VGS
ID
PD
RΘJA
TJ
TSTG
Value
50
±20
0.22
0.35
357
150
-55 to +150
Units
V
V
A
W
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR40
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip

BSS138-G Datasheet Preview

BSS138-G Datasheet

MOSFET

No Preview Available !

MOSFET
Electrical Characteristics ( TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ Max Unit
Off characteristics
Drain-Source breakdown voltage
Gate-body leakage
VGS=0V, ID=250μA
VDS=0V, VGS=±20V
Zero gate voltage drain current
VDS=50V, VGS=0V
VDS=30V, VGS=0V
On characteristics
Gate-threshold voltage (note 1)
VDS=VGS, ID=1mA
Static drain-source on-resistance
(note 1)
VGS=10V, ID=0.22A
VGS=4.5V, ID=0.22A
Forward transconductance (note 1)
Dynamic characteristics (note 2)
Input capacitance
Output capacitance
Reverse transfer capacitance
VDS=10V, ID=0.22A
VDS=25V, VGS=0V, f=1MHz
Switching Characteristics
Turn-on delay time (note 1,2)
Rise time (note 1,2)
Turn-off delay time (note 1,2)
VDD=30V, VDS=10V,
ID=0.29A, RGEN=6Ω
Fall time (note 1,2)
Drain-source body diode characteristics
Body diode forward voltage (note 1)
IS=0.44A, VGS=0V
Note:
1. Pulse test ; Pulse width 300µs, Duty cycle 2%
2. These parameters have no way to verify.
V(BR)DSS
IGSS
IDSS
IDSS
VGS(th)
RDS(ON)
gFS
50
0.8
0.12
V
±100
0.5
100
V
nA
μA
nA
1.5 V
3.5
Ω
6
S
Ciss
Coss
Crss
27
13 pF
6
td(on)
tr
td(off)
tf
5
18
ns
36
14
VSD 1.4 V
Company reserves the right to improve product design , functions and reliability without notice.
QW-BTR40
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number BSS138-G
Description MOSFET
Maker Comchip
Total Page 5 Pages
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