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CDBGBSC101200-G Datasheet Preview

CDBGBSC101200-G Datasheet

Dual Silicon Carbide Power Schottky Diode

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Dual Silicon Carbide Power Schottky Diode
CDBGBSC101200-G
Reverse Voltage: 1200V
Forward Current: 10A
RoHS Device
Features
- Rated to 1200 at 10 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
Circuit diagram
C(4)
A(1) A(3)
C(2)
0.244(6.20)
0.213(5.40)
0.845(21.46)
0.819(20.80)
TO-247
0.640(16.26)
0.620(15.75)
4
0.209(5.30)
0.185(4.70)
0.144(3.65)
0.140(3.55)
0.216(5.49)
0.170(4.32)
1 23
0.800(20.32)
0.780(19.81)
0.084(2.13)
0.065(1.65)
0.433(11.00)
0.425(10.80)
0.055(1.40)
0.039(1.00)
Dimensions in inches and (millimeter)
0.031(0.80)
0.016(0.40)
0.098(2.49)
0.059(1.50)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance from
junction to case
TC = 25°C (Per leg)
TC = 135°C (Per leg)
TC = 155°C (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3 (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave (Per leg)
TC = 25°C (Per leg)
TC = 110°C (Per leg)
Per leg
Per diode
Operating junction temperature range
Storage temperature range
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
RθJC
TJ
TSTG
Value
1200
1200
1200
18
8
5
25
50
109.5
47
1.37
0.69
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:
Page 1




Comchip

CDBGBSC101200-G Datasheet Preview

CDBGBSC101200-G Datasheet

Dual Silicon Carbide Power Schottky Diode

No Preview Available !

Dual Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 5A, Tj = 25°C
IF = 5A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
VF
IR
QC
C
Typ.
1.45
2.05
20
50
36
475
34
33
Max.
1.7
2.5
100
200
-
510
44
40
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBGBSC101200-G)
Fig.1 - Forward IV Characteristics as a
Function of TJ :
7
6
5
4
3
2
1
0
0 0.5 1 1.5 2 2.5
Forward Voltage, VF (V)
Fig.2 - Reverse IV Characteristics as a
Function of TJ :
0.04
0.035
0.03
0.025
0.02
0.015
0.01
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.005
0
0
500
1000
1500
Reverse Voltage, VR (V)
Fig.3 - Current Derating
70
60
50
40 10% Duty
30 30% Duty
20
10 50% Duty 70% Duty D.C.
0
25 50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance VS. Reverse Voltage
500
400
300
200
100
0
0.01
0.1
1
10 100 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV:
Page 2


Part Number CDBGBSC101200-G
Description Dual Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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