• Part: CDBGBSC101200-G
  • Manufacturer: Comchip
  • Size: 69.28 KB
Download CDBGBSC101200-G Datasheet PDF
CDBGBSC101200-G page 2
Page 2

CDBGBSC101200-G Key Features

  • Rated to 1200 at 10 Amps
  • Short recovery time
  • High speed switching possible
  • High frequency operation
  • High temperature operation
  • Temperature independent switching behaviour
  • Positive temperature coefficient on VF
  • 55 ~ +175 -55 ~ +175
  • 510 44 40
  • Forward IV Characteristics as a Function of TJ

CDBGBSC101200-G Description

Dual Silicon Carbide Power Schottky Diode CDBGBSC101200-G Reverse Voltage:.