CDBGBSC201200-G - Dual Silicon Carbide Power Schottky Diode

Product Overview

Comchip

Part number	CDBGBSC201200-G
Manufacturer	Comchip
File Size	70.09 KB
Description	Dual Silicon Carbide Power Schottky Diode
Datasheet	CDBGBSC201200-G Datasheet
Additional preview pages of the CDBGBSC201200-G datasheet.

- Rated to 1200 at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. Circuit diagram C(4) A(1) A(3) C(2) 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65.

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Published: Aug 13, 2019 |