• Part: CDBGBSC201200-G
  • Manufacturer: Comchip
  • Size: 70.09 KB
Download CDBGBSC201200-G Datasheet PDF
CDBGBSC201200-G page 2
Page 2

CDBGBSC201200-G Key Features

  • Rated to 1200 at 20 Amps
  • Short recovery time
  • High speed switching possible
  • High frequency operation
  • High temperature operation
  • Temperature independent switching behaviour
  • Positive temperature coefficient on VF
  • 55 ~ +175 -55 ~ +175
  • 790 54 51
  • Forward IV Characteristics as a Function of TJ

CDBGBSC201200-G Description

Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage:.