CDBGBSC201200-G Overview
Dual Silicon Carbide Power Schottky Diode CDBGBSC201200-G Reverse Voltage:.
CDBGBSC201200-G Key Features
- Rated to 1200 at 20 Amps
- Short recovery time
- High speed switching possible
- High frequency operation
- High temperature operation
- Temperature independent switching behaviour
- Positive temperature coefficient on VF
- 55 ~ +175 -55 ~ +175
- 790 54 51
- Forward IV Characteristics as a Function of TJ