CDBGBSC20650-G Overview
Dual Silicon Carbide Power Schottky Diode CDBGBSC20650-G Reverse Voltage:.
CDBGBSC20650-G Key Features
- Rated to 650V at 20 Amps
- Short recovery time
- High speed switching possible
- High frequency operation
- High temperature operation
- Temperature independent switching behaviour
- Positive temperature coefficient on VF
- 730 75 74
- Forward IV Characteristics as a Function of TJ
- Reverse IV Characteristics as a Function of TJ