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CDBGBSC20650-G - Dual Silicon Carbide Power Schottky Diode

Datasheet Summary

Features

  • - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65).

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Datasheet Details

Part number CDBGBSC20650-G
Manufacturer Comchip
File Size 70.65 KB
Description Dual Silicon Carbide Power Schottky Diode
Datasheet download datasheet CDBGBSC20650-G Datasheet
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Full PDF Text Transcription

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Dual Silicon Carbide Power Schottky Diode CDBGBSC20650-G Reverse Voltage: 650V Forward Current: 20A RoHS Device Features - Rated to 650V at 20 Amps - Short recovery time - High speed switching possible - High frequency operation. - High temperature operation. - Temperature independent switching behaviour. - Positive temperature coefficient on VF Circuit diagram C(4) A(1) A(3) C(2) 0.244(6.20) 0.213(5.40) 0.845(21.46) 0.819(20.80) TO-247 0.640(16.26) 0.620(15.75) 4 0.209(5.30) 0.185(4.70) 0.144(3.65) 0.140(3.55) 0.216(5.49) 0.170(4.32) 1 23 0.177(4.50) MAX. 0.800(20.32) 0.780(19.81) 0.084(2.13) 0.065(1.65) 0.433(11.00) 0.425(10.80) 0.055(1.40) 0.039(1.00) Dimensions in inches and (millimeter) 0.031(0.80) 0.016(0.40) 0.098(2.49) 0.059(1.
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