CDBGBSC101200-G Overview
Dual Silicon Carbide Power Schottky Diode CDBGBSC101200-G Reverse Voltage:.
CDBGBSC101200-G Key Features
- Rated to 1200 at 10 Amps
- Short recovery time
- High speed switching possible
- High frequency operation
- High temperature operation
- Temperature independent switching behaviour
- Positive temperature coefficient on VF
- 55 ~ +175 -55 ~ +175
- 510 44 40
- Forward IV Characteristics as a Function of TJ