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CDBGBSC201200-G Datasheet Preview

CDBGBSC201200-G Datasheet

Dual Silicon Carbide Power Schottky Diode

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Dual Silicon Carbide Power Schottky Diode
CDBGBSC201200-G
Reverse Voltage: 1200V
Forward Current: 20A
RoHS Device
Features
- Rated to 1200 at 20 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
0.244(6.20)
0.213(5.40)
0.845(21.46)
0.819(20.80)
TO-247
0.640(16.26)
0.620(15.75)
4
0.209(5.30)
0.185(4.70)
0.144(3.65)
0.140(3.55)
0.216(5.49)
0.170(4.32)
1 23
Circuit diagram
C(4)
A(1) A(3)
C(2)
0.800(20.32)
0.780(19.81)
0.084(2.13)
0.065(1.65)
0.433(11.00)
0.425(10.80)
0.055(1.40)
0.039(1.00)
Dimensions in inches and (millimeter)
0.031(0.80)
0.016(0.40)
0.098(2.49)
0.059(1.50)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
TJ = 25°C
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance from
junction to case
TJ = 25°C
TJ = 25°C
TC = 25°C (Per leg)
TC = 135°C (Per leg)
TC = 155°C (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3 (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave (Per leg)
TC = 25°C (Per leg)
TC = 110°C (Per leg)
Per leg
Per diode
Maximum case temperature
Operating junction temperature range
Storage temperature range
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
RθJC
TC
TJ
TSTG
Value
1200
1200
1200
25.9
12.5
10
50
100
141.5
62
1.06
0.27
135
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
°C
REV:
Page 1




Comchip

CDBGBSC201200-G Datasheet Preview

CDBGBSC201200-G Datasheet

Dual Silicon Carbide Power Schottky Diode

No Preview Available !

Dual Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 10A, Tj = 25°C
IF = 10A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj = 25°C, f = 1MHZ
VF
IR
QC
C
Typ.
1.63
2.55
50
100
69
770
52
50
Max.
1.8
3
100
200
-
790
54
51
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBGBSC201200-G)
Fig.1 - Forward IV Characteristics as a
Function of TJ :
14
12
10
8
6
4
2
0
0 0.5 1 1.5 2 2.5 3
Forward Voltage, VF (V)
Fig.2 - Reverse IV Characteristics as a
Function of TJ :
0.08
0.07
0.06
0.05
0.04
0.03
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.02
0.01
0
0 200 400 600 800 1000 1200 1400 1600
Reverse Voltage, VR (V)
100
90
80
70
60
50
40
30
20
10
0
25
Fig.3 - Current Derating
10% Duty
30% Duty
50% Duty
70% Duty
DC
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance VS. Reverse Voltage
1000
900
800
700
600
500
400
300
200
100
0
0.01
0.1
1
10 100 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV:
Page 2


Part Number CDBGBSC201200-G
Description Dual Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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