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CDBGBSC20650-G Datasheet Preview

CDBGBSC20650-G Datasheet

Dual Silicon Carbide Power Schottky Diode

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Dual Silicon Carbide Power Schottky Diode
CDBGBSC20650-G
Reverse Voltage: 650V
Forward Current: 20A
RoHS Device
Features
- Rated to 650V at 20 Amps
- Short recovery time
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
Circuit diagram
C(4)
A(1) A(3)
C(2)
0.244(6.20)
0.213(5.40)
0.845(21.46)
0.819(20.80)
TO-247
0.640(16.26)
0.620(15.75)
4
0.209(5.30)
0.185(4.70)
0.144(3.65)
0.140(3.55)
0.216(5.49)
0.170(4.32)
1 23
0.800(20.32)
0.780(19.81)
0.084(2.13)
0.065(1.65)
0.433(11.00)
0.425(10.80)
0.055(1.40)
0.039(1.00)
Dimensions in inches and (millimeter)
0.031(0.80)
0.016(0.40)
0.098(2.49)
0.059(1.50)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance from
junction to case
TC = 25°C (Per leg)
TC = 135°C (Per leg)
TC = 155°C (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3 (Per leg)
Tc = 25°C, tp = 10ms
Half sine wave (Per leg)
TC = 25°C (Per leg)
TC = 110°C (Per leg)
Per leg
Per diode
Operating junction temperature range
Storage temperature range
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
RθJC
TJ
TSTG
Value
650
650
650
33
15
10
50
100
109
48
1.37
0.69
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:
Page 1




Comchip

CDBGBSC20650-G Datasheet Preview

CDBGBSC20650-G Datasheet

Dual Silicon Carbide Power Schottky Diode

No Preview Available !

Dual Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Parameter
Conditions
Symbol Min.
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
IF = 10A, Tj = 25°C
IF = 10A, Tj = 175°C
VR = 650V, Tj = 25°C
VR = 650V, Tj = 175°C
VR = 400V, Tj = 150°C
QC = VR C(V) dv
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 200V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VF
IR
QC
C
Typ.
1.5
1.7
20
30
36
690
72
71
Max.
1.7
2.5
100
200
-
730
75
74
Unit
V
μA
nC
pF
RATING AND CHARACTERISTIC CURVES (CDBGBSC20650-G)
Per Leg:
Fig.1 - Forward IV Characteristics as a
Function of TJ :
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF (V)
Fig.2 - Reverse IV Characteristics as a
Function of TJ :
0.088
0.08
0.072
0.064
0.056
0.048
0.04
0.032
0.024
TJ=25°C
TJ=75°C
TJ=125°C
TJ=175°C
0.016
0.008
0
0 100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
130
120
110
100
90
80
70
60
50
40
30
20
10
0
25
Fig.3 - Current Derating
10% Duty
30% Duty
50% Duty
70% Duty DC
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.4 - Capacitance VS. Reverse Voltage
750
700
600
500
400
300
200
100
0
0.01 0.1 1 10 100 1000 1000
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSCXX
Comchip Technology CO., LTD.
REV:
Page 2


Part Number CDBGBSC20650-G
Description Dual Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 2 Pages
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