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CDBJFSC10650-G Datasheet Preview

CDBJFSC10650-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJFSC10650-G
Reverse Voltage: 650 V
Forward Current: 10 A
RoHS Device
Features
- Rated to 650V at 10 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220F
0.404(10.25)
0.388( 9.85)
0.130(3.30)
0.118(3.00)
0.112(2.85)
0.100(2.55)
0.264(6.70)
0.248(6.30)
0.039(1.00)
0.024(0.60)
0.055(1.40)
0.043(1.10)
0.031(0.80)
0.020(0.50)
0.602(15.30)
0.587(14.90)
0.154(3.90)
0.130(3.30)
0.539(13.70)
0.516(13.10)
0.201(5.10)
0.100(2.55)
0.126(3.20)
0.118(3.00)
0.185(4.70)
0.173(4.40)
0.110(2.80)
0.098(2.50)
0.031(0.80)
0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
TC = 120°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
Symbol
VRRM
VRSM
VDC
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
650
650
650
10
50
100
39.4
17.1
3.81
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC13
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:A
Page 1




Comchip

CDBJFSC10650-G Datasheet Preview

CDBJFSC10650-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Forward voltage
IF = 10 A , TJ = 25°C
IF = 10 A , TJ = 175°C
Reverse current
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
Total capacitive charge
VR = 400V , TJ = 150°C
QC = VR C(V) dv
0
Total capacitance
VR = 0V , TJ = 25°C , f = 1 MHZ
VR = 200V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
QC
C
Typ
1.48
1.7
20
30
36
710
72
Max
1.7
100
Unit
V
µA
nC
pF
Typical Characteristics (CDBJFSC10650-G)
Fig.1 - Forward Characteristics
10
9
TJ=25°C
8
TJ=75°C
7 TJ=125°C
6
TJ=175°C
5
4
3
2
1
0
0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.088
0.080
0.072
0.064
0.056
0.048
0.040
0.032
0.024
0.016
0.008
0
0
TJ=175°C
TJ=125°C
TJ=75°C
TJ=25°C
100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
70
60
10% Duty
50
40
30% Duty
30
50% Duty
20
10
0
25
70% Duty
D.C.
50 75 100 125 150
Case Tempature, TC (°C)
175
750
700
650
600
550
500
450
400
350
300
250
200
150
100
50
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC13
Comchip Technology CO., LTD.
1000
REV:A
Page 2


Part Number CDBJFSC10650-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 3 Pages
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