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Comchip

CDBJFSC3650-G Datasheet Preview

CDBJFSC3650-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJFSC3650-G
Reverse Voltage: 650 V
Forward Current: 3 A
RoHS Device
Features
- Rated to 650V at 3 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220F
0.404(10.25)
0.388( 9.85)
0.130(3.30)
0.118(3.00)
0.112(2.85)
0.100(2.55)
0.264(6.70)
0.248(6.30)
0.039(1.00)
0.024(0.60)
0.055(1.40)
0.043(1.10)
0.031(0.80)
0.020(0.50)
0.602(15.30)
0.587(14.90)
0.154(3.90)
0.130(3.30)
0.539(13.70)
0.516(13.10)
0.201(5.10)
0.100(2.55)
0.126(3.20)
0.118(3.00)
0.185(4.70)
0.173(4.40)
0.110(2.80)
0.098(2.50)
0.031(0.80)
0.020(0.50)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
TC = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
Tc = 25°C
Tc = 110°C
Junction to case
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
650
650
650
3
15
30
53.2
23
7.83
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC10
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:A
Page 1




Comchip

CDBJFSC3650-G Datasheet Preview

CDBJFSC3650-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
Conditions
IF = 3 A , TJ = 25°C
IF = 3 A , TJ = 175°C
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
VR = 400V , TJ = 150°C
QC = VR C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
VR = 200V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
QC
C
Typ
1.4
1.8
10
20
11
190
23
Max
1.7
100
-
Unit
V
µA
nC
pF
Typical Characteristics (CDBJFSC3650-G)
Fig.1 - Forward Characteristics
6
5
TJ=25°C
4
TJ=75°C
3 TJ=125°C
2 TJ=175°C
1
0
0 0.5 1.0 1.5 2.0 2.5
Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.040
0.035
0.030
0.025
TJ=75°C
0.020
TJ=125°C
0.015
0.010
TJ=175°C
TJ=25°C
0.005
0
0 100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
40
35
30 10% Duty
25
20 30% Duty
50% Duty
15
10
70% Duty
5
D.C.
0
25 50 75 100 125 150
Case Tempature, TC (°C)
175
200
180
160
140
120
100
80
60
40
20
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC10
Comchip Technology CO., LTD.
1000
REV:A
Page 2


Part Number CDBJFSC3650-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 3 Pages
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