• Part: CDBJSC101200-G
  • Manufacturer: Comchip
  • Size: 108.63 KB
Download CDBJSC101200-G Datasheet PDF
CDBJSC101200-G page 2
Page 2
CDBJSC101200-G page 3
Page 3

CDBJSC101200-G Key Features

  • Rated to 1200V at 10 Amps
  • Short recovery time
  • High speed switching possible
  • High frequency operation
  • High temperature operation
  • Temperature independent switching behaviour
  • Positive temperature coefficient on VF
  • Forward Characteristics
  • Current Derating
  • Reverse Characteristics

CDBJSC101200-G Description

Silicon Carbide Power Schottky Diode CDBJSC101200-G Reverse Voltage:.