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Comchip

CDBJSC101200-G Datasheet Preview

CDBJSC101200-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJSC101200-G
Reverse Voltage: 1200 V
Forward Current: 10 A
RoHS Device
Features
- Rated to 1200V at 10 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2
0.116(2.95)
0.104(2.65)
0.409(10.40)
0.394(10.00)
0.311(7.90)
0.303(7.70)
0.152(3.85)
0.148(3.75)
0.646(16.40)
Max.
0.620(15.75)
0.600(15.25)
0.181(4.60)
0.173(4.40)
0.052(1.32)
0.048(1.23)
0.260(6.60)
0.244(6.20)
0.067(1.70)
0.045(1.14)
0.155(3.93)
0.138(3.50)
0.551(14.00)
0.512(13.00)
0.107(2.72)
0.094(2.40)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.028(0.70)
0.019(0.49)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Conditions
Symbol
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Tc = 150°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Typical thermal resistance
Junction to case
Operating junction temperature range
Storage temperature range
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
1200
1200
1200
10
50
100
141.5
62
1.06
-55 ~ +175
-55 ~ +175
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC08
Comchip Technology CO., LTD.
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
REV:A
Page 1




Comchip

CDBJSC101200-G Datasheet Preview

CDBJSC101200-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Forward voltage
Reverse current
Total capacitive charge
Total capacitance
Conditions
IF = 10 A , TJ = 25°C
IF = 10 A , TJ = 175°C
VR = 1200V , TJ = 25°C
VR = 1200V , TJ = 175°C
VR = 800V , TJ = 150°C
QC = VR C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
Typ
1.63
2.55
50
100
Max
1.7
100
Unit
V
µA
QC 69
C 780
nC
pF
Typical Characteristics (CDBJSC101200-G)
Fig.1 - Forward Characteristics
10
8 TJ=25°C
TJ=75°C
6 TJ=125°C
TJ=175°C
4
2
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage, VF (V)
Fig.3 - Current Derating
100
90
80
70
60
50
40
30
20
10
0
25
10% Duty
30% Duty
50% Duty
70% Duty
D.C.
50 75 100 125 150
Case Tempature, TC (°C)
175
Fig.2 - Reverse Characteristics
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
TJ=75°C
TJ=125°C
TJ=175°C
TJ=25°C
0
0 200 400 600 800 1000 1200 1400 1600
Reverse Voltage, VR (V)
Fig.4 - Capacitance vs. Reverse Voltage
1000
900
800
700
600
500
400
300
200
100
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
1000
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC08
Comchip Technology CO., LTD.
REV:A
Page 2


Part Number CDBJSC101200-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 3 Pages
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