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Comchip

CDBJSC5650-G Datasheet Preview

CDBJSC5650-G Datasheet

Silicon Carbide Power Schottky Diode

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Silicon Carbide Power Schottky Diode
CDBJSC5650-G
Reverse Voltage: 650 V
Forward Current: 5 A
RoHS Device
Features
- Rated to 650V at 5 Amps
- Short recovery time.
- High speed switching possible.
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF.
Circuit diagram
K(3)
K(1) A(2)
TO-220-2
0.116(2.95)
0.104(2.65)
0.409(10.40)
0.394(10.00)
0.311(7.90)
0.303(7.70)
0.152(3.85)
0.148(3.75)
0.646(16.40)
Max.
0.620(15.75)
0.600(15.25)
0.181(4.60)
0.173(4.40)
0.052(1.32)
0.048(1.23)
0.260(6.60)
0.244(6.20)
0.067(1.70)
0.045(1.14)
0.155(3.93)
0.138(3.50)
0.551(14.00)
0.512(13.00)
0.107(2.72)
0.094(2.40)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.028(0.70)
0.019(0.49)
Dimensions in inches and (millimeter)
Maximum Rating (at TA=25°C unless otherwise noted)
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC blocking voltage
Typical continuous forward current
Repetitive peak forward surge current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Conditions
Tc = 160°C
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
TC = 25°C
TC = 110°C
Junction to case
Symbol
VRRM
VRSM
VDC
IF
IFRM
IFSM
PTOT
RθJC
TJ
TSTG
Value
650
650
650
5
30
60
85.8
37.2
1.748
-55 ~ +175
-55 ~ +175
Unit
V
V
V
A
A
A
W
°C/W
°C
°C
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC04
Comchip Technology CO., LTD.
REV:A
Page 1




Comchip

CDBJSC5650-G Datasheet Preview

CDBJSC5650-G Datasheet

Silicon Carbide Power Schottky Diode

No Preview Available !

Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Forward voltage
IF = 5 A , TJ = 25°C
IF = 5 A , TJ = 175°C
Reverse current
VR = 650V , TJ = 25°C
VR = 650V , TJ = 175°C
Total capacitive charge
VR = 400V , TJ = 150°C
QC = VR C(V) dv
0
VR = 0V , TJ = 25°C , f = 1 MHZ
Total capacitance
VR = 200V , TJ = 25°C , f = 1 MHZ
VR = 400V , TJ = 25°C , f = 1 MHZ
Symbol
VF
IR
QC
C
Typ
1.35
1.55
10
15
23
430
44
42.5
Typical Characteristics (CDBJSC5650-G)
Max
1.7
100
Unit
V
µA
nC
pF
Fig.1 - Forward Characteristics
5.0
TJ=25°C
4.0 TJ=75°C
3.0 TJ=125°C
TJ=175°C
2.0
1.0
0
0 0.4 0.8 1.2 1.6 2.0 2.4
Forward Voltage, VF (V)
Fig.2 - Reverse Characteristics
0.16
0.14
0.12
0.10
0.08
0.06
0.04
TJ=75°C
TJ=125°C
TJ=175°C
TJ=25°C
0.02
0
0 100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
80
70
60 10% Duty
50
40 30% Duty
30 50% Duty
20
70% Duty
10
D.C.
0
25 50 75 100 125 150
Case Tempature, TC (°C)
175
500
450
400
350
300
250
200
150
100
50
0
0.01
0.1 1 10 100
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC04
Comchip Technology CO., LTD.
1000
REV:A
Page 2


Part Number CDBJSC5650-G
Description Silicon Carbide Power Schottky Diode
Maker Comchip
Total Page 3 Pages
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