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Comchip

MJE2955-G Datasheet Preview

MJE2955-G Datasheet

General Purpose Transistor

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General Purpose Transistor
MJE2955-G (PNP)
RoHS Device
Features
- General Purpose and Switching Application
TO-220-3L
0.114(2.89)
0.102(2.59)
0.406(10.31)
0.394(10.01)
0.155(3.935)
0.147(3.735)
0.012(0.300)
Max.
0.491(12.46)
0.475(12.06)
0.184(4.67)
0.176(4.47)
0.054(1.37)
0.046(1.17)
0.350(8.90)
0.335(8.50)
0.156(3.96)
0.140(3.56)
0.054(1.37)
0.046(1.17)
12
3
0.036(0.91)
0.028(0.71)
0.543(13.80)
0.528(13.40)
1. Base
2. Emitter
3. Collector
0.204(5.18)
0.196(4.98)
0.100(2.54)
Typ.
Dimensions in inches and (millimeter)
0.021(0.53)
0.012(0.31)
0.111(2.82)
0.099(2.52)
Maximum Ratings (at TA=25°C unless otherwise noted)
Parameter
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current-continuous
IC
Collector power dissipation
PC
Junction temperature
TJ
Storage temperature range
TSTG
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Conditions
Collector-base breakdown voltage
IC =-10mA , IE=0
Collector-emitter breakdown voltage
IC =-200mA , IB=0
Emitter-base breakdown voltage
IE =-10mA , IC=0
Collector cut-off current
VCB=-70V , IE=0
Emitter cut-off current
VEB=-5V , IC=0
DC current gain
VCE=-4V , IC=-4A
VCE=-4V , IC=-10A
Collector-emitter saturation voltage
IC=-4A , IB=-0.4A
IC=-10A , IB=-3.3A
Base-emitter voltage
VCE=-4V , IC=-4A
Transition frequency
VCE=-10V , IC=-0.5A
Value
-70
-60
-5
-10
2
150
-55 to +150
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE(1)*
hFE(2)*
VCE(sat)*
VCE(sat)*
VBE
fT
Min
-70
-60
-5
20
5
2
Max
-1
-5
100
-1.1
-8
-1.8
Unit
V
V
V
A
W
°C
°C
Unit
V
V
V
mA
mA
V
V
V
MHZ
QW-BTR41
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 1




Comchip

MJE2955-G Datasheet Preview

MJE2955-G Datasheet

General Purpose Transistor

No Preview Available !

General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (MJE2955-G )
Fig.1 - Static Characteristic
-6
COMMON
EMITTER
Ta =25°C
-5
Fig.2 - hFE — IC
1000
-4
-3 100
-2
-1
-0
-0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10
Collector- Emitter Voltage, (V)
-1000
Fig.3 - VCEsat — IC
-100
-10
-10
-10000
-1000
-100
-10
-1
Ta=100°C
Ta=25°C
-100 -1000
Collector Current, (mA)
Fig.5 - IC — VBE
β=10
-10000
10
-1
-1400
-1300
-1200
-1100
-1000
-900
-800
-700
-600
-500
-400
-300
-200
-1
10000
1000
100
-10 -100 -1000
Collector Current, (mA)
Fig.4 - VBEsat — IC
-10000
Ta=25°C
Ta=100°C
-10 -100 -1000
Collector Current, (mA)
β=10
-10000
Fig.6 - COb/Cib — VCB/VEB
f=1MHZ
IE=O/IC=0
Ta =25°C
Cib
Cob
-0.1
-200
2500
2000
-400 -600
-800 -1000
Base-Emmiter Voltage, (mA)
Fig.7 - PC — Ta
-1200
10
-0.1 -1 -10 -30
Reverse Voltage, (V)
1500
1000
500
0
0
QW-BTR41
25 50
75 100 125
Ambient Temperature, (°C)
150
Company reserves the right to improve product design , functions and reliability without notice.
REV:A
Page 2


Part Number MJE2955-G
Description General Purpose Transistor
Maker Comchip
Total Page 3 Pages
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