BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
ICEX
IEBO
VBE
VCE(SAT)
fT
h21E
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Cutoff Current
Emitter-Base Cutoff
Current
Base-Emitter Voltage
(*)
Collector-Emitter
Saturation Voltage
Transition Frequency
Static Forward Current
Transfer Ratio (*)
IC=200 mA
IB=0
IC=-100 mA
VBE=1.5 V
IC=-200 mA
RBE=100 Ω
www.DataSheet.net/
VCE=-90 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VEB=-7 V
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
IC =-1A, VCE=-10 V
f=1 MHz
VCE=-4.0 V, IC=-4.0 A
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Min Typ Max Unit
-60
-60
-
-90 -
-70 -
-70 -
-65 -
-V
-
-
V
-
-
V
- - -5
-10
mA
- - -5
- - -10
- - -5 mA
- - -1.8 V
- - -1.1 V
- 4 - MHz
20 - 70 -
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
