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Comset Semiconductors

BDX18 Datasheet Preview

BDX18 Datasheet

PNP SILICON TRANSISTOR EPITAXIAL BASE

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BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Thermal Fatigue Inspection
Compliance to RoHS
Applications :
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
Solenoid drivers
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
Collector-Emitter Voltage
Collector-Emitter
Voltage
RBE=100
Collector-Emitter Voltage
www.DataSheet.net/
VCBO
VCEX
IC
Emitter-Base Voltage
Collector-Emitter
Voltage
Collector Current
VBE=+1.5 V
IB Base Current
PT
Power Dissipation
@ TC = 25°
TJ Junction Temperature
TS Storage Temperature
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Value
-60
-70
-65
-7
-100
-70
-90
-70
-15
-7
117
-65 to +200
Unit
V
V
V
V
V
A
A
W
°C
05/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/




Comset Semiconductors

BDX18 Datasheet Preview

BDX18 Datasheet

PNP SILICON TRANSISTOR EPITAXIAL BASE

No Preview Available !

BDX18 – BDX18N
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-C
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
VCEO(SUS)
VCEX(SUS)
VCER(SUS)
ICEX
IEBO
VBE
VCE(SAT)
fT
h21E
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Breakdown Voltage (*)
Collector-Emitter
Cutoff Current
Emitter-Base Cutoff
Current
Base-Emitter Voltage
(*)
Collector-Emitter
Saturation Voltage
Transition Frequency
Static Forward Current
Transfer Ratio (*)
IC=200 mA
IB=0
IC=-100 mA
VBE=1.5 V
IC=-200 mA
RBE=100
www.DataSheet.net/
VCE=-90 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VCE=-70 V
VBE=1.5 V
VCE=-60 V, VBE=1.5 V
TCASE=150°C
VEB=-7 V
IC=-4.0 A, VCE=-4.0V
IC=-4.0 A, IB=-0.4V
IC =-1A, VCE=-10 V
f=1 MHz
VCE=-4.0 V, IC=-4.0 A
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Min Typ Max Unit
-60
-60
-
-90 -
-70 -
-70 -
-65 -
-V
-
-
V
-
-
V
- - -5
-10
mA
- - -5
- - -10
- - -5 mA
- - -1.8 V
- - -1.1 V
- 4 - MHz
20 - 70 -
(*) Pulse Width 300 µs, Duty Cycle 2.0%
(1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit
05/10/2012
COMSET SEMICONDUCTORS
2|3
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number BDX18
Description PNP SILICON TRANSISTOR EPITAXIAL BASE
Maker Comset Semiconductors
Total Page 3 Pages
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Comset Semiconductors





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