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PNP BDX20 SILICON TRANSISTORS EPITAXIAL BASE
The BDX20 are mounted in TO-3 metal package. LF Large Signal Power Amplification High Current Fast Switching Thermal Fatigue Inspection Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS Symbol
VCBO VCEO VCEX VEBO IC IB PTOT TJ TS
Ratings
Collector to Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current – Continuous Base Current – Continuous Total Device Dissipation Junction Temperature Storage Temperature
Value
-60 -140 -160 -7 -10 -7 117 200 -65 to +200
Unit
V V V V A A W °C °C
VBE=1.5 V
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THERMAL CHARACTERISTICS Symbol
RthJC
Ratings
Thermal Resistance, Junction to Case
Value
1.5
Unit
°C/W
08/11/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.
BDX20 Datasheet
