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KTLP250 - 8PIN IGBT GATE DRIVE PHOTOCOUPLER

Description

The KTLP250 series consists of an GaAlAs Light emitter diode and an integrated.

This unit is 8-lead DIP package.

KTLP250 series is suitable for gate driving circuit of IGBT or power MOSFET.

Schematic 18 27 36 45

Features

  • s 1. This unit is 8.lead DIP package. 2. Input threshold current: IF=5mA (max. ) 3. Supply current (Icc): 11mA (max. ) 4. Supply voltage (Vcc): 10.
  • 35V 5. Output current (IO): ±1.5A (max. ) 6. Switching time (tpLH/tpHL): 0.5µs (max. ) 7. Isolation voltage: 5000Vrms (max. ) 8. MSL class 1 9. Agency Approvals:.
  • UL Approved (No. E169586): UL1577.
  • c-UL Approved (No. E169586).
  • VDE Approved (No. 40020973): DIN EN60747-5-5.

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Datasheet Details

Part number KTLP250
Manufacturer Cosmo
File Size 322.17 KB
Description 8PIN IGBT GATE DRIVE PHOTOCOUPLER
Datasheet download datasheet KTLP250 Datasheet

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Full PDF Text Transcription

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cosmo  Description The KTLP250 series consists of an GaAlAs Light emitter diode and an integrated. This unit is 8-lead DIP package. KTLP250 series is suitable for gate driving circuit of IGBT or power MOSFET. KTLP250 Series 8PIN IGBT GATE DRIVE PHOTOCOUPLER  Schematic 18 27 36 45  Features 1. This unit is 8.lead DIP package. 2. Input threshold current: IF=5mA (max.) 3. Supply current (Icc): 11mA (max.) 4. Supply voltage (Vcc): 10 – 35V 5. Output current (IO): ±1.5A (max.) 6. Switching time (tpLH/tpHL): 0.5µs (max.) 7. Isolation voltage: 5000Vrms (max.) 8. MSL class 1 9. Agency Approvals: • UL Approved (No. E169586): UL1577 • c-UL Approved (No. E169586) • VDE Approved (No.
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