C2M0045170P Description
VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode.
C2M0045170P Key Features
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High Blocking Voltage with Low On-Resistance
- High Speed Switching with Low Capacitances
- Easy to Parallel and Simple to Drive
- Halogen Free, RoHS pliant
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density