Full PDF Text Transcription for C2M0045170P (Reference)
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C2M0045170P. For precise diagrams, and layout, please refer to the original PDF.
VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode Features Package • Optimized package ...
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45 mΩ N-Channel Enhancement Mode Features Package • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High Blocking Voltage with Low On-Resistance • High Speed Switching with Low Capacitances • Easy to Parallel and Simple to Drive • Halogen Free, RoHS Compliant TAB Drain Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Applications • 1500V Solar Inverters • Switch Mode Power Supplies • High Voltage DC/DC converters • Pulsed Power Applicatio
C2M0045170P Datasheet
