C2M0045170P Silicon Carbide Power MOSFET C2MTM MOS.
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C2M0045170P - Silicon Carbide Power MOSFET
VDS 1700 V C2M0045170P Silicon Carbide Power MOSFET TM C2M MOSFET Technology ID @ 25˚C 72 A RDS(on) 45 mΩ N-Channel Enhancement Mode .
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C2M0045170P - Silicon Carbide Power MOSFET
C2M0045170P Silicon Carbide Power MOSFET C2MTM MOSFET Technology N-Channel Enhancement Mode Features • 2nd generation SiC MOSFET technology • Optimize.