C2M0080170P Description
VDS 1700 V C2M0080170P ID @ 25˚C 40 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode.
C2M0080170P Key Features
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low On-resistance
- High speed switching with low capacitances
- Easy to parallel and simple to drive
- Halogen Free, RoHS pliant
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduced cooling requirements
- Increased power density