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C3D06060A Datasheet Preview

C3D06060A Datasheet

Silicon Carbide Schottky Diode

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C3D06060A
Silicon Carbide Schottky Diode
Z-RecRectifier
Features
600-Volt Schottky Rectifier
Zero Reverse Recovery Current
Zero Forward Recovery Voltage
High-Frequency Operation
Temperature-Independent Switching Behavior
Extremely Fast Switching
Positive Temperature Coefficient on VF
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Package
VRRM = 600 V
IF (TC=135˚C) = 8.5 A
Qc = 16 nC
TO-220-2
PIN 1
PIN 2
CASE
Part Number
C3D06060A
Package
TO-220-2
Marking
C3D06060
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
VRRM
VRSM
VDC
IF
IFRM
IFSM
IFSM
Ptot
TJ , Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Blocking Voltage
Continuous Forward Current
Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Non-Repetitive Peak Forward Surge Current
Power Dissipation
Operating Junction and Storage Temperature
TO-220 Mounting Torque
600
600
600
19
8.5
6
41
27
70
55
200
79
34
-55 to
+175
1
8.8
V
V
V
A TTTCCC===211535˚52C˚˚CC
A
TTCC==2151˚0C˚C, ,tPt=P=1100
ms,
ms,
Half
Half
Sine
Sine
Wave,
Wave,
D=0.3
D=0.3
A TTCC==2151˚0C˚C, ,tptp==1100mmSS, ,HHalaflfSSinieneWWavaev,e,DD==00.3.3
A TC=25˚C, tP = 10 µs, Pulse
W TTCC==2151˚0C˚C
˚C
Nm M3 Screw
lbf-in 6-32 Screw
Note
See
Fig. 3
1 C3D06060A Rev. D
Free Datasheet http://www.nDatasheet.com




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C3D06060A Datasheet Preview

C3D06060A Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Typ.
Max.
Unit
Test Conditions
VF Forward Voltage
IR Reverse Current
1.6 1.8
1.9 2.4
V
10
20
50
200
μA
QC Total Capacitive Charge
16
nC
C Total Capacitance
294
27 pF
26
Note:
1. This is a majority carrier diode, so there is no reverse recovery charge.
IIFF
=
=
6
6
A
A
TTJJ==2157°5C°C
VVRR
=
=
600
600
V
V
TTJJ==2157°5C°C
VdiR/d=t
600 V,
= 500
IAF/=μs6A
TJ = 25°C
VVVRRR
=
=
=
0 V,
200
400
TV,J
V,
=
TTJJ
25°C, f = 1 MHz
= 25˚C, f = 1 MHz
= 25˚C, f = 1 MHz
Thermal Characteristics
Note
Symbol Parameter
RθJC Thermal Resistance from Junction to Case
Typ.
1.9
Unit
°C/W
Typical PerformaFnocrweard Characteristics
1212
11 TJ = 25°C
TJ = 75°C
1010 TJ = 125°C
9 TJ = 175°C
88
7
66
5
44
3
22
1
00
00.0 00..55 1.10 1.1.55 2.20 22..55 3.30
VF ForwVFaFrodrwaVrdoVlotlataggee(V()V)
Figure 1. Forward Characteristics
Reverse Characteristics
101000
9900
8800
7700
6600
5500
4400 TJ = 25°C
TJ = 75°C
3300 TJ = 125°C
2200 TJ = 175°C
1100
00 00 220000 440000 660000 808000 10100000 12120000
VR Reverse Voltage (V)
VR Reverse Voltage (V)
Figure 2. Reverse Characteristics
2 C3D06060A Rev. D
Free Datasheet http://www.nDatasheet.com


Part Number C3D06060A
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 6 Pages
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