Datasheet4U Logo Datasheet4U.com

C3M0065100K Datasheet Silicon Carbide Power MOSFET

Manufacturer: Cree (now Wolfspeed)

📥 Download Datasheet

Overview

VDS 1000 V C3M0065100K ID @ 25˚C 32 A Silicon Carbide Power MOSFET TM C3M MOSFET Technology RDS(on) 65 mΩ N-Channel Enhancement.

Key Features

  • Package.
  • New C3MTM SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant Benefits.
  • Reduce switching losses and minimize gate ringing.
  • Higher system efficiency.

📁 Similar Datasheet

Brand Logo Part Number Description Manufacturer
Wolfspeed Logo C3M0065100K Silicon Carbide Power MOSFET Wolfspeed
Wolfspeed Logo C3M0065100J Silicon Carbide Power MOSFET Wolfspeed

More Datasheets from Cree (now Wolfspeed)

Part Number Description
C3M0065100J Silicon Carbide Power MOSFET
C3M0065090D Silicon Carbide Power MOSFET
C3M0065090J Silicon Carbide Power MOSFET
C3M0060065D Silicon Carbide Power MOSFET
C3M0060065K Silicon Carbide Power MOSFET
C3M0016120D Silicon Carbide Power MOSFET
C3M0016120K Silicon Carbide Power MOSFET
C3M0021120D Silicon Carbide Power MOSFET
C3M0021120K Silicon Carbide Power MOSFET
C3M0030090K Silicon Carbide Power MOSFET