| Part Number | C3M0065100K Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
C3M0065100K
Silicon Carbide Power MOSFET C3MTM MOSFET Technology N-Channel Enhancement Mode
Drain (TAB)
Features
• C3MTM SiC MOSFET technology • Optimized package with separate driver source pin • .
* C3MTM SiC MOSFET technology * Optimized package with separate driver source pin * 8mm of creepage distance between drain and source * High blocking voltage with low on-resistance * High-speed switching with low capacitances * Fast intrinsic diode with low reverse recovery (Qrr) * Halogen free, Ro. |
C3M0065100K Datasheet and Specifications PDF
The C3M0065100K is a Silicon Carbide Power MOSFET.
Key Specifications
| Height | 5.21 mm |
|---|---|
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | C3M0065100K Datasheet |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Manufacturer | Cree |
| Overview |
VDS
1000 V
C3M0065100K
ID @ 25˚C
32 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on)
65 mΩ
N-Channel Enhancement Mode
Features
Package
• New C3MTM SiC MOSFET technol.
Package
* New C3MTM SiC MOSFET technology * Optimized package with separate driver source pin * 8mm of creepage distance between drain and source * High blocking voltage with low on-resistance * High-speed switching with low capacitances * * Fast intrinsic diode with low reverse recovery (Qr. |