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C3M0280090J - Silicon Carbide Power MOSFET

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Cree

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C3M0280090J Silicon Carbide Power MOSFET by Cree - Datasheet Preview — Datasheet preview – C3M0280090J

Datasheet Details

Part number	C3M0280090J
Manufacturer	Cree
File Size	1.02 MB
Description	Silicon Carbide Power MOSFET
Datasheet	C3M0280090J Datasheet
Additional preview pages of the C3M0280090J datasheet.

Product details

Features

New C3M SiC MOSFET technology.
High blocking voltage with low On-resistance.
High speed switching with low capacitances.
New low impedance package with driver source.
Fast intrinsic diode with low reverse recovery (Qrr).
Halogen free, RoHS compliant.
Wide creepage (~7mm) between drain and source Package TAB Drain Benefits.
Higher system efficiency.
Reduced cooling requirements.
Increased power density.

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Published: Nov 3, 2016 |