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C4D20120A Datasheet Preview

C4D20120A Datasheet

Silicon Carbide Schottky Diode

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C4D20120A–Silicon Carbide Schottky Diode
Z-RecRectifier
VRRM = 1200 V
IF = 20 A
Qc =130 nC
Features
1.2kV Schottky Rectifier
Zero Reverse Recovery Current
High-Frequency Operation
Temperature-Independent Switching
Extremely Fast Swtitching
Package
Benefits
Replace Bipolar with Unipolar Rectifiers
Essentially No Switching Losses
Higher Efficiency
Reduction of Heat Sink Requirements
Parallel Devices Without Thermal Runaway
TO-220-2
PIN 1
PIN 2
CASE
Applications
Switch Mode Power Supplies
Power Factor Correction
Motor Drives
Part Number
C4D20120A
Package
TO-220-2
Marking
C4D20120
Maximum Ratings (TC=25°C unless otherwise specified)
Symbol
Parameter
Value Unit
Test Conditions
Note
VRRM
VRSM
VR
IF(AVG)
IFRM
IFSM
Ptot
TC
TJ
Tstg
Repetitive Peak Reverse Voltage
Surge Peak Reverse Voltage
DC Peak Reverse Voltage
Maximum DC Current
Repetitive Peak Forward Surge Current
Non-Repetitive Forward Surge Current
Power Dissipation
Maximum Case Temperature
Operating Junction Range
Storage Temperature Range
TO-220 Mounting Torque
1200
V
1300
1200
V
V
27
91
61
130
110
242
104
135
A TC=135˚C, no AC component
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
A TTCC==2151˚0C˚C, ,tPt=P=1100mms,s,HHalaflfSSinienePuPluslese
W TTCC==2151˚0C˚C
˚C
-55 to
+175
-55 to
+135
˚C
˚C
1 Nm M3 Screw
8.8 lbf-in 6-32 Screw
Subject to change without notice.
www.cree.com/power
1
Free Datasheet http://www.nDatasheet.com




Cree

C4D20120A Datasheet Preview

C4D20120A Datasheet

Silicon Carbide Schottky Diode

No Preview Available !

Electrical Characteristics
Symbol Parameter
Typ.
Max. Unit
Test Conditions
VF Forward Voltage
1.5
2.2
1.8
3
V
IIFF
=
=
20
20
A
A
TTJJ==2157°5C°C
IR Reverse Current
35
65
200
400
μA
VVRR
=
=
1200
1200
V
V
TTJJ==2157°5C°C
QC Total Capacitive Charge
130
nC VdiR/d=t 1=202000V,AI/Fμ=s 20A
TJ = 25°C
C Total Capacitance
1500
93
67
pF
VVVRRR
=
=
=
0 V,
400
800
TV,J
V,
=
TTJJ
25°C, f =
= 25˚C, f
= 25˚C, f
1 MHz
= 1 MHz
= 1 MHz
N1o. teT:his is a majority carrier diode, so there is no reverse recovery charge.
Thermal Characteristics
Note
Symbol
Parameter
RθJC
Thermal Resistance from Junction
to Case
Typ.
0.62
Max.
Unit
°C/W
Test Conditions
Note
Typical Performance
40
35 TTTJJJ===-275555°°°CCC
TJ =125°C
30 TJ =175°C
25
20
15
10
5
0
0123
VF (V)
Figure 1. Forward Characteristics
4
1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0
TTTJJJ===-275555°°°CCC
TJ =125°C
TJ =175°C
500 1000
VR (V)
1500
Figure 2. Reverse Characteristics
2 C4D20120A Rev. B
Free Datasheet http://www.nDatasheet.com


Part Number C4D20120A
Description Silicon Carbide Schottky Diode
Maker Cree
Total Page 5 Pages
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