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C4D20120D - Silicon Carbide Schottky Diode

Features

  • Qc =.
  • 1.2-KVolt Schottky Rectifier Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior Positive Temperature Coefficient on VF Benefits.
  • Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Part Number C4D20120D Package T.

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Full PDF Text Transcription

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C4D20120D Silicon Carbide Schottky Diode VRRM = IF; TC<135˚C 1200 V = 32 A 132 nC Z-Rec™ Rectifier Features Qc = • • • • • 1.
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