CGH31240F hemt equivalent, gan hemt.
* 2.7 - 3.1 GHz Operation
* 12 dB Power Gain
* 60 % Power Added Efficiency
* < 0.2 dB Pulsed Amplitude Droop
Rev 2.0
– May 2015
Subj.
The transistor is supplied in a ceramic/metal flange package.
PackaPgeN:TCypGeH: 3414204200F1
Typical Performance Ove.
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