CGH31240F
CGH31240F is GaN HEMT manufactured by MACOM Technology Solutions.
240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Description
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package.
Package Types: 440201 PN: CGH31240F
Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier
Parameter Output Power Gain Power Added Efficiency
2.7 GHz 243 11.9 60
2.8 GHz 249 11.9 61
2.9 GHz 249 11.9 60
3.0 GHz 245 11.9 59
3.1 GHz 243 11.9 52
Note:...
