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CGH31240F - GaN HEMT

General Description

The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.

Key Features

  • 2.7 - 3.1 GHz Operation.
  • 12 dB Power Gain.
  • 60% Power Added Efficiency.
  • < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO 1 MACOM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www. macom. com for additional data sheets and product information. For further information and support please visit: Rev. 2.2, 2022-11-11 http.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Output Power Gain Power Added Efficiency 2.7 GHz 243 11.9 60 2.8 GHz 249 11.9 61 2.9 GHz 249 11.9 60 3.0 GHz 245 11.9 59 3.1 GHz 243 11.