CGH31240F Description
The CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Measured in the CGH31240F-AMP amplifier circuit, under 300μs pulse width, 20% duty cycle, PIN = 42 dBm...
CGH31240F Key Features
- 3.1 GHz Operation
- 12 dB Power Gain
- 60% Power Added Efficiency
- < 0.2 dB Pulsed Amplitude Droop