Datasheet Details
| Part number | CGH31240F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 2.63 MB |
| Description | GaN HEMT |
| Datasheet | CGH31240F-Wolfspeed.pdf |
|
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Overview: CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar.
| Part number | CGH31240F |
|---|---|
| Manufacturer | Wolfspeed |
| File Size | 2.63 MB |
| Description | GaN HEMT |
| Datasheet | CGH31240F-Wolfspeed.pdf |
|
|
|
Wolfspeed’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.
The transistor is supplied in a ceramic/metal flange package.
Package Types: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Output Power Gain Power Added Efficiency 2.7 GHz 243 11.9 60 2.8 GHz 249 11.9 61 2.9 GHz 249 11.9 60 3.0 GHz 245 11.9 59 3.1 GHz 243 11.9 52 Note: Measured in the CGH31240F-AMP amplifier circuit, under 300μs pulse width, 20% duty cycle, PIN = 42 dBm Units W dB %
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
CGH31240F | GaN HEMT | MACOM |
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CGH31240F | GaN HEMT | Cree |
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