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CGH31240F - GaN HEMT

Datasheet Summary

Description

Wolfspeed’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications.

Features

  • 2.7 - 3.1 GHz Operation.
  • 12 dB Power Gain.
  • 60% Power Added Efficiency.
  • < 0.2 dB Pulsed Amplitude Droop Large Signal Models Available for ADS and MWO Rev. 2.2, 2022-11-11 4600 Silicon Drive | Durham, NC 27703 | Tel: +1.919.313.5300 © 2022 Wolfspeed, Inc. All rights reserved. Wolfspeed  and the Wolfstreak logo are registered trademarks and the Wolfspeed logo is a trademark of Wolfspeed, Inc. The information in this document is subject to change without noti.

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Datasheet Details

Part number CGH31240F
Manufacturer Wolfspeed
File Size 2.63 MB
Description GaN HEMT
Datasheet download datasheet CGH31240F Datasheet
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Full PDF Text Transcription

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CGH31240F 240 W, 2.7-3.1 GHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Description Wolfspeed’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. Package Types: 440201 PN: CGH31240F Typical Performance Over 2.7-3.1 GHz (TC = 25ºC) of Demonstration Amplifier Parameter Output Power Gain Power Added Efficiency 2.7 GHz 243 11.9 60 2.8 GHz 249 11.9 61 2.9 GHz 249 11.9 60 3.0 GHz 245 11.9 59 3.1 GHz 243 11.
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