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CGH31240F - GaN HEMT

General Description

RES, 511 OHM, +/- 1%, 1/16W, 0603 RES, 5.1, OHM, +/- 1%, 1/16W, 0603 CAP, 10.0pF, +/-5%, 250V, 0603, ATC600S CAP, 6.8pF, +/- 0.25 pF, 250V, 0603, ATC600S CAP, 470pF, +/-5%, 100V, 0603, X7R CAP, 33uF, 20%, G CASE CAP, 33000 pF, 0805, 100V, X7R CAP, 1.0uF, 100V, 10%, X7R, 1210 CAP, 10uF, 16V, TANTALUM

Key Features

  • 2.7 - 3.1 GHz Operation.
  • 12 dB Power Gain.
  • 60 % Power Added Efficiency.
  • < 0.2 dB Pulsed Amplitude Droop Rev 2.0.
  • May 2015 Subject to change without notice. www. cree. com/rf 1 Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature Parameter Symbol Rating Pulse Width PW 1 Duty Cycle DC 50 Drain-Source Voltage Gate-to-Source Voltage Power Dissipation Storage Temperature Operating Junction Temperature Maximum Forward Gate Cur.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CGH31240F 240 W, 2700-3100 MHz, 50-ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGH31240F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGH31240F ideal for 2.7-3.1GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package. PackaPgeN:TCypGeH: 3414204200F1 Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 2.7 GHz 2.8 GHz 2.9 GHz 3.0 GHz Output Power 243 249 249 245 3.1 GHz 243 Gain 11.9 11.9 11.9 11.9 11.