CGH40006P
CGH40006P is RF Power GaN HEMT manufactured by Cree.
6 W, RF Power GaN HEMT
Cree’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high gain and wide bandwidth capabilities making the CGH40006P ideal for linear and pressed amplifier circuits. The transistor is available in a solder-down, pill package.
PackaPgNe’sT:yCpGesH: 4404000160P9
Features
- Up to 6 GHz Operation
- 13 dB Small Signal Gain at 2.0 GHz
- 11 dB Small Signal Gain at 6.0 GHz
- 8 W typical at PIN = 32 dBm
- 65 % Efficiency at PIN = 32 dBm
- 28 V...
