• Part: CGHV31500F
  • Description: GaN HEMT
  • Manufacturer: Cree
  • Size: 401.49 KB
Download CGHV31500F Datasheet PDF
Cree
CGHV31500F
Features - 2.7 - 3.1 GHz Operation - 675 W Typical Output Power - 13.3 d B Power Gain - 66% Typical Drain Efficiency - 50 Ohm Internally Matched - <0.3 d B Pulsed Amplitude Droop Subject to change without notice. .cree./rf Absolute Maximum Ratings (not simultaneous) Parameter Symbol Rating Pulse Width PW 500 Duty Cycle DC 10 Drain-Source Voltage Gate-to-Source Voltage Storage Temperature Operating Junction Temperature Maximum Forward Gate Current Maximum Drain Current1 Soldering Temperature2 Screw Torque VDSS VGS TSTG TJ IGMAX IDMAX TS τ 125 -10, +2 -65, +150 225 80 24 245 40 Pulsed Thermal Resistance, Junction to Case RθJC 0.22 Pulsed Thermal Resistance, Junction to Case RθJC 0.30 Case Operating Temperature TC -40, +85 Notes: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at http://.cree./rf/document-library Electrical Characteristics Units µs % Volts Volts ˚C ˚C m A A ˚C in-oz ˚C/W ˚C/W ˚C Conditions 25˚C...