Part CGHV31500F
Description GaN HEMT
Manufacturer Cree
Size 401.49 KB
Cree

CGHV31500F Overview

Key Features

  • 2.7 - 3.1 GHz Operation
  • 675 W Typical Output Power
  • 13.3 dB Power Gain
  • 66% Typical Drain Efficiency
  • 50 Ohm Internally Matched
  • <0.3 dB Pulsed Amplitude Droop Subject to change without notice