CGHV31500F hemt equivalent, gan hemt.
* 2.7 - 3.1 GHz Operation
* 675 W Typical Output Power
* 13.3 dB Power Gain
* 66% Typical Drain Efficiency
* 50 Ohm Internally Matched
* <0..
The transistor is supplied in a ceramic/metal flange package, type 440217.
PN: Package
TCyGpHeV: 43410520107F
Typica.
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