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CGHV35400F Datasheet GaN HEMT

Manufacturer: Cree (now Wolfspeed)

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Overview

CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications.

The transistor is supplied in a ceramic/metal flange package, type 440210.

PN: Package TCyGpHeV: 43450420105F Typical Performance Over 2.9-3.5 GHz (TC = 85˚C) of Demonstration Amplifier Parameter 2.9 GHz 3.2 GHz 3.5 GHz Output Power 375 400 360 Gain 9.8 10 9.6 Drain Efficiency 66 59 57 Note: Measured in the CGHV35400F-AMP application circuit, under 500 μs pulse width, 10% duty cycle, PIN = 46 dBm.

Key Features

  • 2.9 - 3.5 GHz Operation.
  • 400 W Typical Output Power.
  • 10.5 dB Power Gain.
  • 60% Typical Drain Efficiency.
  • 50 Ohm Internally Matched.

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