CGHV35400F hemt equivalent, gan hemt.
* 2.9 - 3.5 GHz Operation
* 400 W Typical Output Power
* 10.5 dB Power Gain
* 60% Typical Drain Efficiency
* 50 Ohm Internally Matched
* <0..
The transistor is supplied in a ceramic/metal flange package, type 440210.
PN: Package
TCyGpHeV: 43450420105F
Typica.
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