CGHV35400F Key Features
- 3.5 GHz Operation
- 400 W Typical Output Power
- 10.5 dB Power Gain
- 60% Typical Drain Efficiency
- 50 Ohm Internally Matched
- <0.3 dB Pulsed Amplitude Droop
- May 2015
- Part: CGHV35400F
- Manufacturer: Cree
- Size: 486.33 KB
Related Cree Datasheets
| Part Number | Description |
|---|---|
| CGHV35060MP | GaN HEMT |
| CGHV35150 | GaN HEMT |
| CGHV31500F | GaN HEMT |
| CGHV14250 | GaN HEMT |
| CGHV14500 | GaN HEMT |
CGHV35400F Description
CGHV35400F 400 W, 2900 - 3500 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems Cree’s CGHV35400F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV35400F ideal for 2.9 - 3.5 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange...