Datasheet Summary
PRELIMINARY
500 W, 2700
- 3100 MHz, 50-Ohm Input/Output Matched, GaN HEMT for S-Band Radar Systems
Cree’s CGHV31500F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV31500F ideal for 2.7
- 3.1 GHz S-Band radar amplifier applications. The transistor is supplied in a ceramic/metal flange package, type 440217.
PN: Package
TCyGpHeV: 43410520107F
Typical Performance Over 2.7-3.1 GHz (TC = 25˚C) of Demonstration Amplifier
Parameter
2.7 GHz
2.9 GHz
3.1 GHz
Output Power
665 705 645
Gain
Drain Efficiency
66 68 62
Note: Measured in...
