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CGHV60075D5 Datasheet GaN HEMT Die

Manufacturer: Cree (now Wolfspeed)

Overview: CGHV60075D5 75 W, 6.0 GHz, GaN HEMT Die Cree’s CGHV60075D5 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. GaN HEMTs offer greater power density and wider bandwidths compared to Si and GaAs transistors.

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Key Features

  • 19 dB Typical Small Signal Gain at 4 GHz.
  • 17 dB Typical Small Signal Gain at 6 GHz.
  • 65% Typical Power Added Efficiency at 4 GHz.
  • 60% Typical Power Added Efficiency at 6 GHz.
  • 75 W Typical PSAT.
  • 50 V Operation.
  • High Breakdown Voltage.
  • Up to 6 GHz Operation.

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