Datasheet Summary
Silicon Carbide Power MOSFET E-Series Automotive
N-Channel Enhancement Mode
Features
Package
- 3rd generation SiC MOSFET technology
- Optimized package with separate driver source pin
- 8mm of creepage distance between drain and source
- High blocking voltage with low on-resistance
- High-speed switching with low capacitances
- -
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS pliant
- Automotive Qualified (AEC-Q101) and PPAP Capable
Benefits
Tab Drain
1 234 D SSG
Drain (Pin 1, TAB)
- Reduce switching losses and minimize gate ringing
- Higher system efficiency
- Reduce cooling requirements
- Increase power density
- Increase...
