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E3M0075120K - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • Package.
  • 3rd generation SiC MOSFET technology Tab.
  • Optimized package with separate driver source pin Drain.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits.
  • Reduc.

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Datasheet Details

Part number E3M0075120K
Manufacturer Wolfspeed
File Size 0.98 MB
Description Silicon Carbide Power MOSFET
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E3M0075120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency 1 234 Typical Applications • Motor Control • EV Battery Chargers • High Voltage DC/DC Converters Part Num
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