E3M0075120J2 - Silicon Carbide Power MOSFET

Datasheet Summary

Features

Package.
3rd generation SiC MOSFET technology Tab.
Optimized package with separate driver source pin Drain.
4.7mm of creepage distance between drain and source.
High blocking voltage with low on-resistance.
High-speed switching with low capacitances.
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
Automotive Qualified (AEC-Q101) and PPAP Capable Benefits 1234567 Drai.

Wolfspeed

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Datasheet Details

Part number	E3M0075120J2
Manufacturer	Wolfspeed
File Size	1.08 MB
Description	Silicon Carbide Power MOSFET
Datasheet	E3M0075120J2 Datasheet
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E3M0075120J2 Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology Tab • Optimized package with separate driver source pin Drain • 4.

Published: Dec 15, 2024 |