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E3M0075120K - Silicon Carbide Power MOSFET

Datasheet Summary

Features

  • Package.
  • 3rd generation SiC MOSFET technology.
  • Optimized package with separate driver source pin.
  • 8mm of creepage distance between drain and source.
  • High blocking voltage with low on-resistance.
  • High-speed switching with low capacitances.
  • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant.
  • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Tab Drain 1 234 D SSG Drain (Pin 1,.

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Datasheet Details

Part number E3M0075120K
Manufacturer Cree
File Size 1.00 MB
Description Silicon Carbide Power MOSFET
Datasheet download datasheet E3M0075120K Datasheet
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E3M0075120K Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode Features Package • 3rd generation SiC MOSFET technology • Optimized package with separate driver source pin • 8mm of creepage distance between drain and source • High blocking voltage with low on-resistance • High-speed switching with low capacitances • • Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant • Automotive Qualified (AEC-Q101) and PPAP Capable Benefits Tab Drain 1 234 D SSG Drain (Pin 1, TAB) • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency Gate (Pin 4) Driver Source (Pin 3) Power Source (Pin 2) Applications • EV
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