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Cypress Semiconductor Electronic Components Datasheet

CY62146G-MoBL Datasheet

4-Mbit (256K words x 16 bit) Static RAM

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CY62146G MoBL® Automotive
4-Mbit (256K words × 16 bit) Static RAM
with Error-Correcting Code (ECC)
4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC)
Features
AEC-Q100 qualified
High speed: 45 ns
Temperature Range
Automotive-A: -40 C to +85 C
Ultra-low standby power
Typical standby current: 3.5 A
Embedded ECC for single-bit error correction[1]
Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V
1.0-V data retention
TTL-compatible inputs and outputs
Pb-free 44-pin TSOP II package
Functional Description
CY62146G is high-performance CMOS low-power (MoBL)
SRAM devices with embedded ECC.
Device is accessed by asserting the chip enable (CE) input LOW.
Data writes are performed by asserting the Write Enable (WE)
input LOW, while providing the data on I/O0 through I/O15 and
address on A0 through A17 pins. The Byte High Enable (BHE)
and Byte Low Enable (BLE) inputs control write operations to the
upper and lower bytes of the specified memory location. BHE
controls I/O8 through I/O15 and BLE controls I/O0 through I/O7.
Data reads are performed by asserting the Output Enable (OE)
input and providing the required address on the address lines.
Read data is accessible on the I/O lines (I/O0 through I/O15).
Byte accesses can be performed by asserting the required byte
enable signal (BHE or BLE) to read either the upper byte or the
lower byte of data from the specified address location.
All I/Os (I/O0 through I/O15) are placed in a HI-Z state when the
device is deselected (CE HIGH), or control signals are
de-asserted (OE, BLE, BHE).
The logic block diagram is on page 2.
Product Portfolio
Product
CY62146G30
CY62146G
Power Dissipation
Features and Options
(see Pin Configuration –
CY62146G on page 4)
Range
VCC Range (V)
Speed
(ns)
Operating ICC (mA)
f = fmax
Standby, ISB2 (µA)
Typ[2]
Max
Typ[2]
Max
Single Chip Enable
Automotive-A 2.2 V–3.6 V
45
15
20
3.5 8.7
4.5 V–5.5 V
Notes
1. This device does not support automatic write-back on error detection.
2.
Typical values are included for reference only
(for VCC range of 4.5 V–5.5 V), TA = 25 °C.
and
are
not
guaranteed
or
tested.
Typical
values
are
measured
at
VCC
=
3
V
(for
VCC
range
of
2.2
V–3.6
V)
and
VCC
=
5
V
Cypress Semiconductor Corporation • 198 Champion Court
Document Number: 002-03594 Rev. *C
• San Jose, CA 95134-1709 • 408-943-2600
Revised November 24, 2017


Cypress Semiconductor Electronic Components Datasheet

CY62146G-MoBL Datasheet

4-Mbit (256K words x 16 bit) Static RAM

No Preview Available !

Logic Block Diagram – CY62146G
ECC ENCODER
INPUT BUFFER
A0
A1
A2
A3
A4
MEMORY
A5 ARRAY
A6
A7
A8
A9
COLUMN DECODER
CY62146G MoBL® Automotive
I/O0I/O7
I/O8I/O15
BHE
WE
CE
OE
BLE
Document Number: 002-03594 Rev. *C
Page 2 of 19


Part Number CY62146G-MoBL
Description 4-Mbit (256K words x 16 bit) Static RAM
Maker Cypress
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