CY62146G-MoBL
Features
- AEC-Q100 qualified
- High speed: 45 ns
- Temperature Range
- Automotive-A: -40 C to +85 C
- Ultra-low standby power
- Typical standby current: 3.5 A
- Embedded ECC for single-bit error correction[1]
- Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V
- 1.0-V data retention
- TTL-patible inputs and outputs
- Pb-free 44-pin TSOP II package
Functional Description
CY62146G is high-performance CMOS low-power (Mo BL) SRAM devices with embedded ECC. Device is accessed by asserting the chip enable (CE) input LOW. Data writes are performed by asserting the Write Enable (WE) input LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The Byte High Enable (BHE) and Byte Low Enable (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. BHE controls I/O8 through I/O15 and BLE controls I/O0 through I/O7. Data reads are performed by asserting the Output Enable (OE) input and providing the required address on...
