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CY62146G-MoBL - 4-Mbit (256K words x 16 bit) Static RAM

General Description

CY62146G is high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Device is accessed by asserting the chip enable (CE) input LOW.

Key Features

  • AEC-Q100 qualified.
  • High speed: 45 ns.
  • Temperature Range.
  • Automotive-A: -40 C to +85 C.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Embedded ECC for single-bit error correction[1].
  • Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 44-pin TSOP II package Functional.

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Full PDF Text Transcription for CY62146G-MoBL (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for CY62146G-MoBL. For precise diagrams, tables, and layout, please refer to the original PDF.

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CY62146G MoBL® Automotive 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ AEC-Q100 qualified ■ High speed: 45 ns ■ Temperature Range ❐ Automotive-A: -40 C to +85 C ■ Ultra-low standby power ❐ Typical standby current: 3.5 A ■ Embedded ECC for single-bit error correction[1] ■ Voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 44-pin TSOP II package Functional Description CY62146G is high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Device is accessed by asserting the chip enable (CE) input LOW.