CY62146G Datasheet - Cypress

4-Mbit (256K words x 16 bit) Static RAM

CY62146G Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Embedded ECC for single-bit error correction[1]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0-V data retention

* TTL

CY62146G General Description

CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62146GE/CY62146GESL device includes an ERR pin that signals an error-dete.

CY62146G Datasheet (578.01 KB)

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Datasheet Details

Part number:

CY62146G

Manufacturer:

Cypress

File Size:

578.01 KB

Description:

4-mbit (256k words x 16 bit) static ram.
CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit).

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CY62146G 4-Mbit 256K words bit Static RAM Cypress

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CY62146G Features

CY62146G General Description

Datasheet Details

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