CY62146GESL, CY62146G Datasheet - Cypress

CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM

CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY62146GE/CY62146GESL device includes an ERR pin that signals an error-dete.

CY62146GESL Features

* High speed: 45 ns/55 ns

* Ultra-low standby power

* Typical standby current: 3.5 A

* Maximum standby current: 8.7 A

* Embedded ECC for single-bit error correction[1]

* Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V

* 1.0-V data retention

* TTL

CY62146G-Cypress.pdf

CY62146GESL Datasheet Preview — This datasheet PDF includes multiple part numbers: CY62146GESL, CY62146G. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

CY62146GESL, CY62146G

Manufacturer:

Cypress

File Size:

578.01 KB

Description:

4-mbit (256k words x 16 bit) static ram.

Note:

This datasheet PDF includes multiple part numbers: CY62146GESL, CY62146G.
Please refer to the document for exact specifications by model.

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TAGS

CY62146GESL CY62146G 4-Mbit 256K words bit Static RAM Cypress

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