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CY62146GSL - 4-Mbit (256K words x 16 bit) Static RAM

Download the CY62146GSL datasheet PDF. This datasheet also covers the CY62146G variant, as both devices belong to the same 4-mbit (256k words x 16 bit) static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.

Both devices are offered in single and dual chip enable options and in multiple pin configurations.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 A.
  • Maximum standby current: 8.7 A.
  • Embedded ECC for single-bit error correction[1].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Error indication (ERR) pin to indicate 1-bit error detection and correction.
  • Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY62146G-Cypress.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY62146CV18 256K x 16 Static RAM Cypress Semiconductor
CY62146CV30 256K x 16 Static RAM Cypress Semiconductor
CY62146E 4-Mbit (256K x 16) Static RAM Cypress Semiconductor
CY62146ESL 4-Mbit (256K x 16) Static RAM Cypress Semiconductor
CY62146EV30 4-Mbit (256K x 16) Static RAM Cypress Semiconductor

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62146G 4-Mbit (256K words x 16 bit) Static RAM
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GE 4-Mbit (256K words x 16 bit) Static RAM
CY62146GESL 4-Mbit (256K words x 16 bit) Static RAM
CY62146GN 4-Mbit (256K x 16) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
CY62146G/CY62146GE CY62146GSL/CY62146GESL MoBL® 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (256K words × 16 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 A ❐ Maximum standby current: 8.7 A ■ Embedded ECC for single-bit error correction[1] ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Error indication (ERR) pin to indicate 1-bit error detection and correction ■ Pb-free 48-ball VFBGA and 44-pin TSOP II packages Functional Description CY62146G/CY62146GE and CY62146GSL/CY62146GESL are high-performance CMOS low-power (MoBL) SRAM devices with embedded ECC.