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CY62148GN - 4-Mbit (512K x 8) Static RAM

General Description

The CY62148GN is a high-performance CMOS static RAM organized as 512K words by 8-bits.

Key Features

  • Very high speed: 45 ns.
  • Wide voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • Ultra low standby power.
  • Typical standby current: 3.5 µA.
  • Maximum standby current: 8.7 µA.
  • Easy memory expansion with CE and OE features.
  • Automatic power-down when deselected.
  • Complementary metal oxide semiconductor (CMOS) for optimum speed and power.
  • Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC) packages F.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CY62148GN MoBL® 4-Mbit (512K × 8) Static RAM 4-Mbit (512K × 8) Static RAM Features ■ Very high speed: 45 ns ■ Wide voltage range: 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ Ultra low standby power ❐ Typical standby current: 3.5 µA ❐ Maximum standby current: 8.7 µA ■ Easy memory expansion with CE and OE features ■ Automatic power-down when deselected ■ Complementary metal oxide semiconductor (CMOS) for optimum speed and power ■ Available in Pb-free 32-pin thin small outline package (TSOP) II and 32-pin small-outline integrated circuit (SOIC) packages Functional Description The CY62148GN is a high-performance CMOS static RAM organized as 512K words by 8-bits. This device features advanced circuit design to provide ultra low standby current.