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CY62148G - 4-Mbit (512K words x 8 bit) Static RAM

Description

CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1].

This device is offered multiple pin configurations.

Device is accessed by asserting the chip enable (CE) input LOW.

Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power.
  • Typical standby current: 3.5 μA.
  • Maximum standby current: 8.7 μA.
  • Embedded ECC for single-bit error correction[1].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 32-pin SOIC and 32-pin TSOP II packages Functional.

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Full PDF Text Transcription

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CY62148G MoBL® 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) 4-Mbit (512K words × 8 bit) Static RAM with Error-Correcting Code (ECC) Features ■ High speed: 45 ns/55 ns ■ Ultra-low standby power ❐ Typical standby current: 3.5 μA ❐ Maximum standby current: 8.7 μA ■ Embedded ECC for single-bit error correction[1] ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V ■ 1.0-V data retention ■ TTL-compatible inputs and outputs ■ Pb-free 32-pin SOIC and 32-pin TSOP II packages Functional Description CY62148G is a high-performance CMOS low-power (MoBL) SRAM device with embedded ECC[1]. This device is offered multiple pin configurations. Device is accessed by asserting the chip enable (CE) input LOW.
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