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CY62148G - ultra-low-power RAM

General Description

CY62148G is a high-performance CMOS low-power (MoBL™) SRAM device with embedded ECC[1].

This device is offered multiple pin configurations.

Device is accessed by asserting the chip enable (CE) input LOW.

Key Features

  • High speed: 45 ns/55 ns.
  • Ultra-low standby power - Typical standby current: 3.5 µA - Maximum standby current: 8.7 µA.
  • Embedded ECC for single-bit error correction[1].
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V.
  • 1.0-V data retention.
  • TTL-compatible inputs and outputs.
  • Pb-free 32-pin SOIC and 32-pin TSOP II/STSOP packages Functional.

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CY62148G 4-MB MoBL™ ultra-low-power RAM with ECC (512K words × 8-bit) Features • High speed: 45 ns/55 ns • Ultra-low standby power - Typical standby current: 3.5 µA - Maximum standby current: 8.7 µA • Embedded ECC for single-bit error correction[1] • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, 4.5 V to 5.5 V • 1.0-V data retention • TTL-compatible inputs and outputs • Pb-free 32-pin SOIC and 32-pin TSOP II/STSOP packages Functional description CY62148G is a high-performance CMOS low-power (MoBL™) SRAM device with embedded ECC[1]. This device is offered multiple pin configurations. Device is accessed by asserting the chip enable (CE) input LOW.