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CY62148 - 512K x 8 MoBL Static RAM

Download the CY62148 datasheet PDF. This datasheet also covers the CY6 variant, as both devices belong to the same 512k x 8 mobl static ram family and are provided as variant models within a single manufacturer datasheet.

General Description

The CY62148 is a high-performance CMOS static RAM organized as 524,288 words by 8 bits.

Easy memory expansion is provided by an active LOW chip enable (CE), an active LOW output enable (OE), and three-state drivers.

Key Features

  • 4.5V.
  • 5.5V operation.
  • CMOS for optimum speed/power.
  • Low active power.
  • 660 mW (max. ).
  • Low standby power (L version).
  • 2.75 mW (max. ).
  • Automatic power-down when deselected.
  • TTL-compatible inputs and outputs.
  • Easy memory expansion with CE and OE options an automatic power-down feature that reduces power consumption by more than 99% when deselected. Writing to the device is accomplished by taking chip enable one.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (CY6-148.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
CY62148G ultra-low-power RAM Infineon
CY62148GN 4-Mbit (512K x 8) Static RAM Cypress
CY62146DV30 4M Bit Static RAM Cypress
CY62146G 4-Mbit (256K words x 16 bit) Static RAM Cypress
CY62146G-MoBL 4-Mbit (256K words x 16 bit) Static RAM Cypress

Other Datasheets by Cypress (now Infineon)

Part Number Description
CY62148DV30 4-Mbit (512 K x 8) MoBL Static RAM
CY62148E 4-Mbit (512 K x 8) Static RAM
CY62148ESL 4-Mbit (512 K x 8) Static RAM
CY62148EV30 4-Mbit (512K x 8) Static RAM
CY62148G 4-Mbit (512K words x 8 bit) Static RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
1CY 621 48 fax id: 1079 www.DataSheet4U.com PRELIMINARY CY62148 512K x 8 Static RAM Features • 4.5V−5.5V operation • CMOS for optimum speed/power • Low active power — 660 mW (max.) • Low standby power (L version) — 2.75 mW (max.) • Automatic power-down when deselected • TTL-compatible inputs and outputs • Easy memory expansion with CE and OE options an automatic power-down feature that reduces power consumption by more than 99% when deselected. Writing to the device is accomplished by taking chip enable one (CE) and write enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins (A0 through A18).