Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
Rating:
1
★
(14 votes)
Integrated Silicon Solution Inc
IS61NLP51218 - 256K x 32/ 256K x 36 and 512K x 18 PIPELINE NO WAIT STATE BUS SRAM
IS61NP25632 IS61NP25636 IS61NP51218 IS61NLP25632 IS61NLP25636 IS61NLP51218
256K x 32, 256K x 36 and 512K x 18 PIPELINE 'NO WAIT' STATE BUS SRAM
ISSI
Rating:
1
★
(6 votes)
Macronix International
27C4100 - 4M-BIT [512K x 8/256K x 16] CMOS EPROM
MX27C4100/27C4096
4M-BIT [512K x 8/256K x 16] CMOS EPROM
FEATURES
• 256K x 16 organization(MX27C4096, JEDEC pin • • • •
out) 512K x 8 or 256K x 16 or
Rating:
1
★
(6 votes)
NanoAmp Solutions
EM512D16 - 512K x 16-Bit Ultra-Low Power Asynchronous SRAM
NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com
EM512D16 Advance Information
EM512D
Rating:
1
★
(6 votes)
Chingis Technology
Pm25LD010 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
Pm25LD512/010/ 020
FEATURES
• Single
Rating:
1
★
(6 votes)
Chingis Technology
Pm25LD020 - 512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory
512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface
Pm25LD512/010/ 020
FEATURES
• Single
Rating:
1
★
(6 votes)
STMicroelectronics
M27C400 - 4 Mbit 512Kb x8 or 256Kb x16 UV EPROM and OTP EPROM
M27C400
4 Mbit (512Kb x8 or 256Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 55ns BYTE-WIDE or WORD-WIDE CO
Rating:
1
★
(5 votes)
Integrated Device Technology
IDT71V424 - 3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
3.3V CMOS STATIC RAM 4 MEG (512K x 8-BIT)
Integrated Device Technology, Inc.
ADVANCE INFORMATION IDT71V424
FEATURES:
• 512K x 8 advanced high-speed
Rating:
1
★
(5 votes)
Samsung semiconductor
K9F4008W0A-TIB0 - 512K x 8 bit NAND Flash Memory
K9F3208W0A-TCB0, K9F3208W0A-TIB0
Document Title
4M x 8 Bit NAND Flash Memory
FLASH MEMORY
Revision History
Revision No. History
0.0 0.1 Initial issu
Rating:
1
★
(5 votes)
ISSI
IS43LR32200B - 512K x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32200B
512K x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32200B is 67,108,864 bits CMOS Mobile Double Data Rate Synchronous D
Rating:
1
★
(5 votes)
Cypress Semiconductor
CY62157DV20 - 8M (512K x 16) Static RAM
CY62157DV20 MoBL2
Features
• Very high speed: 55 ns • Wide voltage range: 1.65V to 2.2V • Pin compatible with CY62157CV18 • Ultra low active power
—
Rating:
1
★
(5 votes)
Motorola
MCM72CB32 - 256KB and 512KB BurstRAM Secondary Cache Module
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MCM72CB32/D
256KB and 512KB BurstRAM™ Secondary Cache Module for Pentium™
The MCM72CB3
Rating:
1
★
(5 votes)
ATMEL
27C040 - 4-Megabit 512K x 8 OTP EPROM
AT27C040
Features
• Fast Read Access Time - 70 ns • Low Power CMOS Operation •
100 µA max. Standby 30 mA max. Active at 5 MHz JEDEC Standard Packages
Rating:
1
★
(5 votes)
Macronix International
27C4096 - 4M-BIT [512K x 8/256K x 16] CMOS EPROM
MX27C4100/27C4096
4M-BIT [512K x 8/256K x 16] CMOS EPROM
FEATURES
• 256K x 16 organization(MX27C4096, JEDEC pin • • • •
out) 512K x 8 or 256K x 16 or
Rating:
1
★
(5 votes)
STMicroelectronics
27C800 - 8 Mbit 1Mb x8 or 512Kb x16 UV EPROM and OTP EPROM
M27C800
8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM
s
5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF
Rating:
1
★
(5 votes)
STMicroelectronics
29F040 - 4 Mbit 512Kb x8 / Uniform Block Single Supply Flash Memory
M29F040
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory
NOT FOR NEW DESIGN
M29F040 is replaced by the M29F040B 5V ± 10% SUPPLY VOLTAGE fo
Rating:
1
★
(5 votes)
IDT
IDT70P3537 - (IDT70P3517 / IDT70P3537) 512K/256K x36 SYNCHRONOUS DUAL QDR-II
www.DataSheet4U.com
512K/256K x36 SYNCHRONOUS DUAL QDR-IITM
®
PRELIMINARY DATASHET IDT70P3537 IDT70P3517
Features
◆ ◆ ◆ ◆
◆ ◆ ◆
18Mb Density (512
Rating:
1
★
(5 votes)
Samsung semiconductor
K6R4008V1B - 512K x8 Bit High Speed Static RAM
www.DataSheet4U.com
PRELIMINARY
CMOS SRAM
K6R4008V1B-C/B-L, K6R4008V1B-I/B-P
Document Title
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat
Rating:
1
★
(5 votes)
