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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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RP512x Series 0.3 µA IQ Ultra-low Quiescent Current 300 mA Buck DC/DC Converter No. EA-400-190401 OVERVIEW RP512x is a DC/DC converter featuring 0.3

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1CY7C1380BV25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 200,166,

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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ESMT SDRAM FEATURES JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key program

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M27C800 8 Mbit (1Mb x8 or 512Kb x16) UV EPROM and OTP EPROM s 5V ± 10% SUPPLY VOLTAGE in READ OPERATION ACCESS TIME: 50ns BYTE-WIDE or WORD-WIDE CONF

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www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www.DataSheet4U.com www

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IS61LV51216 IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI DECEMBER 2005 ® FEATURES • High

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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MX27C4000 4M-BIT [512K x8] CMOS EPROM FEATURES • • • • • • 512K x 8 organization Single +5V power supply +12.5V programming voltage Fast access time

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IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.DataShe

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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M29F800AT M29F800AB 8 Mbit (1Mb x8 or 512Kb x16, Boot Block) Single Supply Flash Memory PRELIMINARY DATA s SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM,

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MPC2105C/D 512KB and 1MB BurstRAM Secondary Cache Modules for PowerPC™ PReP/CHRP Platf

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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M27C4001 4 Mbit (512Kb x 8) UV EPROM and OTP EPROM Feature summary ■ 5V ± 10% supply voltage in Read operation ■ Access time: 35ns ■ Low power con

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M58BW016BT, M58BW016BB M58BW016DT, M58BW016DB 16 Mbit (512Kb x32, Boot Block, Burst) 3V Supply Flash Memories PE4FEATURES SUMMARY s SUPPLY VOLTAGE – V

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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