512K Datasheet | Specifications & PDF Download

1CY7C1380BV25 PRELIMINARY CY7C1380BV25 CY7C1382BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM Features • • • • • • • • • • • Fast clock speed: 200,166,

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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512Kbit/1 Mbit / 2 Mbit Single Operating Voltage Serial Flash Memory With 100 MHz Dual-Output SPI Bus Interface Pm25LD512/010/ 020 FEATURES • Single

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Features • Read Access Time – 200 ns • Automatic Page Write Operation – Internal Address and Data Latches for 256 Bytes – Internal Control Timer • Fas

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IS61LV51216 IS64LV51216 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH 3.3V SUPPLY www.datasheet4u.com ISSI DECEMBER 2005 ® FEATURES • High

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IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,43

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Product Preview GS815018/36AB-357/333/300/250 www.DataSheet4U.com 119-Bump BGA Commercial Temp Industrial Temp Features • Register-Register Late Writ

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IS61VPD25636A IS61LPD25636A IS61VPD51218A IS61LPD51218A 256K x 36, 512K x 18 9 Mb SYNCHRONOUS PIPELINED, DOUBLE CYCLE DESELECT STATIC RAM www.DataShe

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Features • Single-voltage Operation • • • – 5V Read – 5V Programming Fast Read Access Time – 70 ns Internal Erase/Program Control Sector Architecture

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Features • Single-voltage Read/Write Operation: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV) • Fast Read Access Time – 70 ns • Internal Erase/Program Control

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Product Preview GS8150V18/36AB-357/333/300/250 www.DataSheet4U.com 119-Bump BGA Commercial Temp Industrial Temp Features • Register-Register Late Wri

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i PEM 16 M b ASYNC SRAM Mb Austin Semiconductor, Inc. AS8SLC512K32PEC 16Mb, 512Kx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated M

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ACT–SF2816 High Speed 128Kx16 SRAM / 512Kx16 FLASH Multichip Module FEATURES CIRCUIT TECHNOLOGY www.aeroflex.com I 2 – 128K x 8 SRAMs & 2 – 512K x

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FUJITSU SEMICONDUCTOR DATA SHEET DS05-20845-4E FLASH MEMORY CMOS 8M (1M × 8/512K × 16) BIT MBM29LV800TA-70/90/-12/MBM29LV800BA-70/-90/-12 s FEATURE

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® LY615128 Rev. 1.2 5V 512K X 8 BIT HIGH SPEED CMOS SRAM REVISION HISTORY Revision Rev. 1.0 Rev. 1.1 Rev. 1.2 Description Initial Issue Revised Pac

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www.DataSheet4U.com Features • Single Supply for Read and Write: 2.7V to 3.3V (BV), 3.0V to 3.3V (LV) • Access Time – 90 ns • Sector Erase Architectu

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www.DataSheet4U.com Features • Single Voltage Read/Write Operation: 2.65V to 3.6V • Access Time – 70 ns • Sector Erase Architecture • • • – Fifteen 3

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IS42/45SM/RM/VM32200M 512K x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42SM/RM/VM32200M are mobile 67,108,864 bits CMOS Synchronous

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Features • 2.7V to 3.6V Read/Write Operation • Fast Read Access Time - 120 ns • Internal Erase/Program Control • Sector Architecture – One 8K Words (1

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