Datasheet4U Logo Datasheet4U.com

CY62162G - 16-Mbit (512K x 32) Static RAM

Description

The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.

Both CY62162G and CY62162GE are available with dual chip enables.

Features

  • Ultra-low standby power.
  • Typical standby current: 5.5 A.
  • Maximum standby current: 16 A.
  • High speed: 45 ns/55 ns.
  • Embedded error-correcting code (ECC) for single-bit error correction.
  • Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V.
  • 1.0-V data retention.
  • Transistor-transistor logic (TTL) compatible inputs and outputs.
  • ERR pin to indicate 1-bit error detection and correction.
  • Easy memory expansion with CE1 and CE2 features.
  • Available in.

📥 Download Datasheet

Datasheet preview – CY62162G

Datasheet Details

Part number CY62162G
Manufacturer Cypress
File Size 518.77 KB
Description 16-Mbit (512K x 32) Static RAM
Datasheet download datasheet CY62162G Datasheet
Additional preview pages of the CY62162G datasheet.

📁 Similar Datasheet

  • CY62167DV18 - 16M (1024K x 16) Static RAM (Cypress Semiconductor)
  • CY62167DV20 - 16-Mb (1024K x 16) Static RAM (Cypress Semiconductor)
  • CY62167DV30 - 16-Mbit (1M x 16) Static RAM (Cypress Semiconductor)
  • CY62167E - 16-Mbit (1M x 16 / 2M x 8) Static RAM (Cypress Semiconductor)
  • CY62167EV18 - 16-Mbit (1M x 16) Static RAM (Cypress Semiconductor)
  • CY62167EV30 - 16-Mbit (1M x 16 / 2M x 8) Static RAM (Cypress Semiconductor)
  • CY62168DV30 - 16-Mbit (2048K x 8) Static RAM (Cypress Semiconductor)
  • CY62168EV30 - 16-Mbit (2 M x 8) Static RAM (Cypress Semiconductor)
  • CY62168G - 16-Mbit (2M words x 8 bits) Static RAM (Cypress Semiconductor)
  • CY62168GE - 16-Mbit (2M words x 8 bits) Static RAM (Cypress Semiconductor)
Other Datasheets by Cypress

Full PDF Text Transcription

Click to expand full text
CY62162G/CY62162GE MoBL 16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC) 16-Mbit (512K × 32) Static RAM with Error-Correcting Code (ECC) Features ■ Ultra-low standby power ❐ Typical standby current: 5.5 A ❐ Maximum standby current: 16 A ■ High speed: 45 ns/55 ns ■ Embedded error-correcting code (ECC) for single-bit error correction ■ Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V ■ 1.0-V data retention ■ Transistor-transistor logic (TTL) compatible inputs and outputs ■ ERR pin to indicate 1-bit error detection and correction ■ Easy memory expansion with CE1 and CE2 features ■ Available in Pb-free 119-ball PBGA package, 512K × 32 bits SRAM Functional Description The CY62162G and CY62162GE devices are high performance CMOS MoBL SRAM organized as 512K words by 32-bits.
Published: |