CY62162G
Features
- Ultra-low standby power
- Typical standby current: 5.5 A
- Maximum standby current: 16 A
- High speed: 45 ns/55 ns
- Embedded error-correcting code (ECC) for single-bit error correction
- Wide voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V
- 1.0-V data retention
- Transistor-transistor logic (TTL) patible inputs and outputs
- ERR pin to indicate 1-bit error detection and correction
- Easy memory expansion with CE1 and CE2 features
- Available in Pb-free 119-ball PBGA package, 512K × 32 bits
SRAM
Functional Description
The CY62162G and CY62162GE devices are high performance CMOS Mo BL SRAM organized as 512K words by 32-bits. Both CY62162G and CY62162GE are available with dual chip enables. CY62162GE includes an error indication pin that signals the host processor in the case of a single bit error-detection and correction event. It is ideal for providing More Battery Life™ (Mo BL®) in portable applications such as cellular telephones. The device also has an automatic power...
